Samsung M471B1G73BH0-YK0 8GB vs AMD R538G1601S2LS 8GB

总分

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

总分

AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

差异规格评论

差异

Samsung M471B1G73BH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73BH0-YK0 8GB

报告一个错误

更快的读取速度，GB/s

12.1 11.3

测试中的平均数值

AMD R538G1601S2LS 8GB

需要考虑的原因
AMD R538G1601S2LS 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 -54% 更低的延时
更快的写入速度，GB/s

8.2 7.6

测试中的平均数值

规格

完整的技术规格清单

Samsung M471B1G73BH0-YK0 8GB

AMD R538G1601S2LS 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

43 28
读取速度，GB/s

12.1 11.3
写入速度，GB/s

7.6 8.2
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2034 1793

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston 9965690-002.A00G 8GB

Kingston 9965690-002.A00G 8GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9905624-033.A00G 8GB

Kingston 9905624-033.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Corsair CMK8GX4M2B3600C18 4GB

Corsair CMK8GX4M2B3600C18 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston KHX2400C15/16G 16GB

Kingston KHX2400C15/16G 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston 9905700-012.A00G 8GB

Kingston 9905700-012.A00G 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Corsair CM4X8GF2400Z16K4 8GB

Corsair CM4X8GF2400Z16K4 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Corsair CMV32GX4M1A2666C18 32GB

Corsair CMV32GX4M1A2666C18 32GB