Samsung M471B1G73BH0-YK0 8GB vs Ramaxel Technology RMSA3330ME88HCF-3200 32GB

总分

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

总分

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

差异规格评论

差异

Samsung M471B1G73BH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73BH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 55

左右 22% 更低的延时

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

需要考虑的原因
Ramaxel Technology RMSA3330ME88HCF-3200 32GB

报告一个错误

更快的读取速度，GB/s

16.3 12.1

测试中的平均数值
更快的写入速度，GB/s

12.3 7.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73BH0-YK0 8GB

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 55
读取速度，GB/s

12.1 16.3
写入速度，GB/s

7.6 12.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2034 2653

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64HZ-2G3H1 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Samsung M378B1G73QH0-CK0 8GB

Asgard VMA45UG-MIC1U22T2 8GB

Asgard VMA45UG-MIC1U22T2 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

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G Skill Intl F4-3600C18-16GTZN 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMK32GX4M2Z3200C16 16GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Corsair CMD64GX4M4B3333C16 16GB

Corsair CMD64GX4M4B3333C16 16GB