Samsung M471B1G73DB0-YK0 8GB vs Kingston KTP9W1-MID 16GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

Kingston KTP9W1-MID 16GB

Kingston KTP9W1-MID 16GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

Kingston KTP9W1-MID 16GB

需要考虑的原因
Kingston KTP9W1-MID 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 45

左右 -41% 更低的延时
更快的读取速度，GB/s

16.5 11.9

测试中的平均数值
更快的写入速度，GB/s

14.4 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

Kingston KTP9W1-MID 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 32
读取速度，GB/s

11.9 16.5
写入速度，GB/s

8.1 14.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2077 3424

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMK8GX4M2B3000C15 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

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Essencore Limited IM48GU48N24-FFFHM 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire CL15-15-15 D4-2133 8GB