Samsung M471B5173BH0-YK0 4GB vs Crucial Technology CT25664BF160BJ.M4F 2GB

总分

Samsung M471B5173BH0-YK0 4GB

Samsung M471B5173BH0-YK0 4GB

总分

Crucial Technology CT25664BF160BJ.M4F 2GB

Crucial Technology CT25664BF160BJ.M4F 2GB

差异规格评论

差异

Samsung M471B5173BH0-YK0 4GB

需要考虑的原因
Samsung M471B5173BH0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 80

左右 45% 更低的延时
更快的读取速度，GB/s

11.5 6

测试中的平均数值
更快的写入速度，GB/s

7.7 4.3

测试中的平均数值

Crucial Technology CT25664BF160BJ.M4F 2GB

需要考虑的原因
Crucial Technology CT25664BF160BJ.M4F 2GB

报告一个错误

规格

完整的技术规格清单

Samsung M471B5173BH0-YK0 4GB

Crucial Technology CT25664BF160BJ.M4F 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

44 80
读取速度，GB/s

11.5 6.0
写入速度，GB/s

7.7 4.3
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1927 966

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5173BH0-YK0 4GB

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Crucial Technology CT25664BF160BJ.M4F 2GB

Crucial Technology CT25664BF160BJ.M4F 2GB

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Crucial Technology BL16G32C16U4B.M8FB1 16GB

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PNY Electronics PNY 2GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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Mushkin 99[2/7/4]200[F/T] 8GB

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Corsair CMK32GX4M4K4333C19 8GB

Corsair CMK32GX4M4K4333C19 8GB