Samsung M471B5173DB0-YK0 4GB vs A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

需要考虑的原因
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 45

左右 -15% 更低的延时
更快的读取速度，GB/s

15.9 12

测试中的平均数值
更快的写入速度，GB/s

12.3 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 39
读取速度，GB/s

12.0 15.9
写入速度，GB/s

7.8 12.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1939 2878

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 9ASF1G72PZ-2G3B1 8GB

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Kingston 9965516-430.A00G 16GB

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Crucial Technology BL8G32C16U4B.M8FE 8GB

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Smart Modular SF4641G8CK8IEHLSBG 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Apacer Technology 78.C1GMM.AUC0B 8GB

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Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB