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Samsung M471B5173DB0-YK0 4GB
Avant Technology J641GU42J5213ND 8GB

Samsung M471B5173DB0-YK0 4GB vs Avant Technology J641GU42J5213ND 8GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Avant Technology J641GU42J5213ND 8GB

Avant Technology J641GU42J5213ND 8GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12 left arrow 11.3
    测试中的平均数值
Avant Technology J641GU42J5213ND 8GB 需要考虑的原因
Avant Technology J641GU42J5213ND 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 45
    左右 -5% 更低的延时
  • 更快的写入速度，GB/s
    9.2 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Avant Technology J641GU42J5213ND 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 43
  • 读取速度，GB/s
    12.0 left arrow 11.3
  • 写入速度，GB/s
    7.8 left arrow 9.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 2098

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Avant Technology J641GU42J5213ND 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
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Corsair CM4X8GD3200C16K2E 8GB
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