Samsung M471B5173DB0-YK0 4GB vs Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 45

左右 -114% 更低的延时
更快的读取速度，GB/s

18.5 12

测试中的平均数值
更快的写入速度，GB/s

14.0 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 21
读取速度，GB/s

12.0 18.5
写入速度，GB/s

7.8 14.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1939 3263

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Kingston HP28D4S7D8HA-16X 16GB

Kingston HP28D4S7D8HA-16X 16GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Corsair CMH128GX4M4E3200C16 32GB

Corsair CMH128GX4M4E3200C16 32GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Kingston 9905702-204.A00G 8GB

Kingston 9905702-204.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C14-16GTZKO 16GB

G Skill Intl F4-3200C14-16GTZKO 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Corsair CMK16GX4M4C3200C16 4GB

Corsair CMK16GX4M4C3200C16 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Kingston XRGM6C-MIE 16GB

Kingston XRGM6C-MIE 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Crucial Technology BLS4G4D240FSE.8FAR 4GB

Crucial Technology BLS4G4D240FSE.8FAR 4GB