Samsung M471B5173DB0-YK0 4GB vs Corsair CMU32GX4M4C3000C16 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Corsair CMU32GX4M4C3000C16 8GB

Corsair CMU32GX4M4C3000C16 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

Corsair CMU32GX4M4C3000C16 8GB

需要考虑的原因
Corsair CMU32GX4M4C3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 45

左右 -105% 更低的延时
更快的读取速度，GB/s

18.4 12

测试中的平均数值
更快的写入速度，GB/s

12.8 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Corsair CMU32GX4M4C3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 22
读取速度，GB/s

12.0 18.4
写入速度，GB/s

7.8 12.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1939 3205

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Micron Technology 9ASF51272PZ-2G1AX 4GB

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DSL Memory D4SS12081SH21A-A 4GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

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Samsung M471A2K43CB1-CTD 16GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Corsair CMK64GX4M4B3333C16 16GB

Corsair CMK64GX4M4B3333C16 16GB