Samsung M471B5173DB0-YK0 4GB vs Crucial Technology BL16G26C16U4W.16FE 16GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Crucial Technology BL16G26C16U4W.16FE 16GB

Crucial Technology BL16G26C16U4W.16FE 16GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

Crucial Technology BL16G26C16U4W.16FE 16GB

需要考虑的原因
Crucial Technology BL16G26C16U4W.16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 45

左右 -55% 更低的延时
更快的读取速度，GB/s

17.6 12

测试中的平均数值
更快的写入速度，GB/s

14.8 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Crucial Technology BL16G26C16U4W.16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 29
读取速度，GB/s

12.0 17.6
写入速度，GB/s

7.8 14.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1939 3687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston KP223C-ELD 2GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB

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Corsair CM2X1024-6400C4 1GB

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Smart Modular SMS4TDC3C0K0446SCG 4GB

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