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Samsung M471B5173DB0-YK0 4GB
Crucial Technology CB8GS2400.C8JT 8GB

Samsung M471B5173DB0-YK0 4GB vs Crucial Technology CB8GS2400.C8JT 8GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Crucial Technology CB8GS2400.C8JT 8GB

Crucial Technology CB8GS2400.C8JT 8GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
Crucial Technology CB8GS2400.C8JT 8GB 需要考虑的原因
Crucial Technology CB8GS2400.C8JT 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 45
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CB8GS2400.C8JT 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 35
  • 读取速度，GB/s
    12.0 left arrow 16.7
  • 写入速度，GB/s
    7.8 left arrow 12.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 2933

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Crucial Technology CB8GS2400.C8JT 8GB RAM的比较

Kingston 9905678-138.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M471A5244CB0-CWE 4GB
Crucial Technology BL16G32C16S4B.8FB 16GB
Crucial Technology BL16G32C16S4B.8FB 16GB
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内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Samsung M378A1K43EB2-CWE 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Micron Technology M471A1K43CB1-CTD 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CB8GS2400.C8JT 8GB
Crucial Technology CB8GS2400.C8JT 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
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Samsung M393A4K40CB2-CTD 32GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Crucial Technology CT4G4DFS824A.C8FADP 4GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905665-014.A00G 4GB
Kingston 9905665-014.A00G 4GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
G Skill Intl F4-3200C16-8GRKB 8GB
G Skill Intl F4-3200C16-8GRKB 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
内存RAM
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Kingston 99U5471-030.A00LF 8GB
Kingston 9905712-010.A00G 16GB
Kingston 9905712-010.A00G 16GB
内存RAM