Samsung M471B5173DB0-YK0 4GB vs G Skill Intl F4-2133C15-8GVK 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

12 11.6

测试中的平均数值

G Skill Intl F4-2133C15-8GVK 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 45

左右 -50% 更低的延时
更快的写入速度，GB/s

10.1 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-2133C15-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 30
读取速度，GB/s

12.0 11.6
写入速度，GB/s

7.8 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1939 2332

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905469-143.A00LF 4GB

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Corsair CMG16GX4M2D3600C18 8GB

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Kingston KHX318C10FR/8G 8GB

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Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

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Samsung M471B5173DB0-YK0 4GB

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G Skill Intl F4-2133C15-8GVK 8GB

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Micron Technology 36ASF4G72LZ-2G3B1 32GB

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Kingston KYXC0V-MIH 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

G Skill Intl F3-1333C9-4GIS 4GB

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Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-4400C17-8GVK 8GB

G Skill Intl F4-4400C17-8GVK 8GB