Samsung M471B5173DB0-YK0 4GB vs G Skill Intl F4-3466C16-8GTZKW 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

G Skill Intl F4-3466C16-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 45

左右 -61% 更低的延时
更快的读取速度，GB/s

17.5 12

测试中的平均数值
更快的写入速度，GB/s

12.6 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-3466C16-8GTZKW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 28
读取速度，GB/s

12.0 17.5
写入速度，GB/s

7.8 12.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1939 3104

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

SK Hynix GKE800SO51208-2133AH 8GB

SK Hynix GKE800SO51208-2133AH 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Mushkin MR[A/B]4U320LLLM16G 16GB

Mushkin MR[A/B]4U320LLLM16G 16GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston 9905678-105.A00G 8GB

Kingston 9905678-105.A00G 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

G Skill Intl F4-3200C14-16GFX 16GB

G Skill Intl F4-3200C14-16GFX 16GB