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Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-3600C14-8GTZN 8GB

Samsung M471B5173DB0-YK0 4GB vs G Skill Intl F4-3600C14-8GTZN 8GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
G Skill Intl F4-3600C14-8GTZN 8GB 需要考虑的原因
G Skill Intl F4-3600C14-8GTZN 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 45
    左右 -45% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-3600C14-8GTZN 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 31
  • 读取速度，GB/s
    12.0 left arrow 19.1
  • 写入速度，GB/s
    7.8 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 3091

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

G Skill Intl F4-3600C14-8GTZN 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CMK32GX4M2K3600C16 16GB
Corsair CMK32GX4M2K3600C16 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KP6FH5-MIE 32GB
Kingston KP6FH5-MIE 32GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
Kingston 9905469-153.A00LF 4GB
Kingston 9905469-153.A00LF 4GB
Corsair CMT16GX4M2K3600C16 8GB
Corsair CMT16GX4M2K3600C16 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Neo Forza NMUD480E82-3600 8GB
Neo Forza NMUD480E82-3600 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Corsair CMV8GX4M1L2400C16 8GB
Corsair CMV8GX4M1L2400C16 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
AMD R7S48G2400U2S 8GB
AMD R7S48G2400U2S 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-2400C15-8GRB 8GB
G Skill Intl F4-2400C15-8GRB 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM