Samsung M471B5173DB0-YK0 4GB vs Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

需要考虑的原因
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 45

左右 -13% 更低的延时
更快的读取速度，GB/s

13.4 12

测试中的平均数值
更快的写入速度，GB/s

11.3 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 40
读取速度，GB/s

12.0 13.4
写入速度，GB/s

7.8 11.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 2362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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G Skill Intl F4-2400C15-8GFT 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

Kingston KHX1600C9D3/8G 8GB

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Crucial Technology CT4G4DFS8213.C8FAD11 4GB

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Kingston 99U5428-063.A00LF 8GB

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G Skill Intl F4-2400C15-8GFT 8GB

G Skill Intl F4-2400C15-8GFT 8GB

Samsung M378B5773DH0-CH9 2GB

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G Skill Intl F4-3200C14-8GTZ 8GB

G Skill Intl F4-3200C14-8GTZ 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Corsair CMK16GX4M2G4000C16 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Wilk Elektronik S.A. GR2133S464L15/16G 16GB

Wilk Elektronik S.A. GR2133S464L15/16G 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston KHX3000C16D4/16GX 16GB

Kingston KHX3000C16D4/16GX 16GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240