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Samsung M471B5173DB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Samsung M471B5173DB0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12 left arrow 6.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 6.3
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 45
  • 读取速度，GB/s
    12.0 left arrow 6.9
  • 写入速度，GB/s
    7.8 left arrow 6.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 1499

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Corsair CMH16GX4M2Z3200C16 8GB
Corsair CMH16GX4M2Z3200C16 8GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CM4X16GC3000C15D4 16GB
Corsair CM4X16GC3000C15D4 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
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G Skill Intl F4-2800C18-16GRS 16GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMR32GX4M2A2666C16 16GB
Corsair CMR32GX4M2A2666C16 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMR64GX4M4C3466C16 16GB
Corsair CMR64GX4M4C3466C16 16GB
内存RAM
Samsung M471A2K43BB1-CRC 16GB
Samsung M471A2K43BB1-CRC 16GB
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905744-023.A00G 16GB
Kingston 9905744-023.A00G 16GB
内存RAM
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Kingston ACR256X64D3S1333C9 2GB
Avant Technology W642GU42J7240N8 16GB
Avant Technology W642GU42J7240N8 16GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
G Skill Intl F4-2400C16-8GFT 8GB
G Skill Intl F4-2400C16-8GFT 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Corsair CMT32GX4M4C3200C16 8GB
Corsair CMT32GX4M4C3200C16 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Golden Empire CL15-17-17 D4-3000 8GB
Golden Empire CL15-17-17 D4-3000 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3600C16-8GVKC 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
内存RAM