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Samsung M471B5173DB0-YK0 4GB
Kingston 9965662-018.A00G 32GB
比较
Samsung M471B5173DB0-YK0 4GB vs Kingston 9965662-018.A00G 32GB
总分
Samsung M471B5173DB0-YK0 4GB
总分
Kingston 9965662-018.A00G 32GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
更快的读取速度,GB/s
12
7.3
测试中的平均数值
需要考虑的原因
Kingston 9965662-018.A00G 32GB
报告一个错误
低于PassMark测试中的延时,ns
33
45
左右 -36% 更低的延时
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Kingston 9965662-018.A00G 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
33
读取速度,GB/s
12.0
7.3
写入速度,GB/s
7.8
7.8
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1939
2221
Samsung M471B5173DB0-YK0 4GB RAM的比较
Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
Kingston 9965662-018.A00G 32GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix DDR2 800 2G 2GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP24D4S7S8MBP-8 8GB
Corsair CM4X16GC3000C16K4D 16GB
Corsair CMK32GX4M4K4133C19 8GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMT64GX4M8Z3600C16 8GB
Kingston 9905403-444.A00LF 4GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
DSL Memory D4SS1G081SH24A-A 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Crucial Technology BL16G26C16U4W.16FE 16GB
Elpida EBJ40UG8EFU0-GN-F 4GB
DSL Memory CIR-W4SUSS2408G 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston KGTWW1-MIE 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
Samsung M386B4G70DM0-CMA4 32GB
Samsung M378A5143EB1-CPB 4GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2400C15-8GRB 8GB
报告一个错误
×
Bug description
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