RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471B5173DB0-YK0 4GB
Kingston HP37D4U1S8ME-8XR 8GB

Samsung M471B5173DB0-YK0 4GB vs Kingston HP37D4U1S8ME-8XR 8GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Kingston HP37D4U1S8ME-8XR 8GB

Kingston HP37D4U1S8ME-8XR 8GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
Kingston HP37D4U1S8ME-8XR 8GB 需要考虑的原因
Kingston HP37D4U1S8ME-8XR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 45
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    19.6 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Kingston HP37D4U1S8ME-8XR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 36
  • 读取速度，GB/s
    12.0 left arrow 19.6
  • 写入速度，GB/s
    7.8 left arrow 14.9
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 3266

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Kingston HP37D4U1S8ME-8XR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9905678-028.A00G 8GB
Kingston 9905678-028.A00G 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMV8GX4M1A2666C18 8GB
Corsair CMV8GX4M1A2666C18 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4000C15-8GTRS 8GB
G Skill Intl F4-4000C15-8GTRS 8GB
内存RAM
Corsair CMZ16GX3M2A1600C10 8GB
Corsair CMZ16GX3M2A1600C10 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMD64GX4M4B3466C16 16GB
Corsair CMD64GX4M4B3466C16 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMT32GX4M2C3200C14 16GB
Corsair CMT32GX4M2C3200C14 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology J644GU44J2320NF 32GB
Avant Technology J644GU44J2320NF 32GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C18-8GTZR 8GB
G Skill Intl F4-3600C18-8GTZR 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Kingston 9905712-001.B00G 16GB
Kingston 9905712-001.B00G 16GB
内存RAM
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
内存RAM