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Samsung M471B5173DB0-YK0 4GB
Kingston KHX2400C12D4/4GX 4GB

Samsung M471B5173DB0-YK0 4GB vs Kingston KHX2400C12D4/4GX 4GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Kingston KHX2400C12D4/4GX 4GB

Kingston KHX2400C12D4/4GX 4GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
Kingston KHX2400C12D4/4GX 4GB 需要考虑的原因
Kingston KHX2400C12D4/4GX 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 45
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Kingston KHX2400C12D4/4GX 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 34
  • 读取速度，GB/s
    12.0 left arrow 15.5
  • 写入速度，GB/s
    7.8 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 2881

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Kingston KHX2400C12D4/4GX 4GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston KHX2400C12D4/4GX 4GB
Kingston KHX2400C12D4/4GX 4GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
内存RAM
Kingston KVR24N17S8/4 4GB
Kingston KVR24N17S8/4 4GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston M378A1K43CB2-CRC 8GB
Kingston M378A1K43CB2-CRC 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Kingston KHX3000C16D4/32GX 32GB
Kingston KHX3000C16D4/32GX 32GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston 9905598-028.A00G 8GB
Kingston 9905598-028.A00G 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Apacer Technology 78.CAGP7.C7C0B 8GB
Apacer Technology 78.CAGP7.C7C0B 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
EVGA 16G-D4-2800-MR 4GB
EVGA 16G-D4-2800-MR 4GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
G Skill Intl F4-3000C15-8GVR 8GB
G Skill Intl F4-3000C15-8GVR 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
内存RAM