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Samsung M471B5173DB0-YK0 4GB
Kingston KHX3466C19D4/16G 16GB

Samsung M471B5173DB0-YK0 4GB vs Kingston KHX3466C19D4/16G 16GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Kingston KHX3466C19D4/16G 16GB

Kingston KHX3466C19D4/16G 16GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
Kingston KHX3466C19D4/16G 16GB 需要考虑的原因
Kingston KHX3466C19D4/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 45
    左右 -80% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    27700 left arrow 12800
    左右 2.16 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Kingston KHX3466C19D4/16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 25
  • 读取速度，GB/s
    12.0 left arrow 17.6
  • 写入速度，GB/s
    7.8 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 27700
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-27700, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    1939 left arrow 3542

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Kingston KHX3466C19D4/16G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CM4B8G2J2133A15S 8GB
Corsair CM4B8G2J2133A15S 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Team Group Inc. Team-Elite-2400 4GB
Team Group Inc. Team-Elite-2400 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
内存RAM
SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
SK Hynix HMA84GR7AFR4N-VK 32GB
SK Hynix HMA84GR7AFR4N-VK 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Avant Technology J642GU42J9266NF 16GB
Avant Technology J642GU42J9266NF 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Avant Technology W641GU42J5213NC 8GB
Avant Technology W641GU42J5213NC 8GB
内存RAM