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Samsung M471B5173DB0-YK0 4GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB

Samsung M471B5173DB0-YK0 4GB vs Micron Technology 18ASF2G72PZ-2G3B1 16GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 50
    左右 10% 更低的延时
  • 更快的读取速度，GB/s
    12 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 7.3
    测试中的平均数值
Micron Technology 18ASF2G72PZ-2G3B1 16GB 需要考虑的原因
Micron Technology 18ASF2G72PZ-2G3B1 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 50
  • 读取速度，GB/s
    12.0 left arrow 10.2
  • 写入速度，GB/s
    7.8 left arrow 7.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 2248

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB RAM的比较

G Skill Intl F3-1866C8-8GTX 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
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Essencore Limited IM48GU88N26-GIIHMB 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston HX426C16FB2/8-SP 8GB
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Kingston 9965525-018.A00LF 4GB
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内存RAM
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Kingston ACR256X64D3S1333C9 2GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
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Kingston HP691160-H63-KEB 8GB
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内存RAM
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SK Hynix HMT451S6BFR8A-PB 4GB
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Corsair CM4X8GF2400C16S4 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
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内存RAM
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Kingston 9905664-010.A00G 4GB
内存RAM
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Kingston 9965589-024.D01G 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BL8G24C16U4B.8FB 8GB
Crucial Technology BL8G24C16U4B.8FB 8GB
内存RAM