Samsung M471B5173DB0-YK0 4GB vs Micron Technology 18ASF2G72PZ-2G3B1 16GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 50

左右 10% 更低的延时
更快的读取速度，GB/s

12 10.2

测试中的平均数值
更快的写入速度，GB/s

7.8 7.3

测试中的平均数值

Micron Technology 18ASF2G72PZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PZ-2G3B1 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 50
读取速度，GB/s

12.0 10.2
写入速度，GB/s

7.8 7.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 2248

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Corsair CMD16GX3M2A1600C7 8GB

Corsair CMD16GX3M2A1600C7 8GB

G Skill Intl F4-3400C16-16GVR 16GB

G Skill Intl F4-3400C16-16GVR 16GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CMW16GX4M2C3600C18 8GB

Corsair CMW16GX4M2C3600C18 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-2400C15-4GRK 4GB

G Skill Intl F4-2400C15-4GRK 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 9965589-035.D00G 16GB

Kingston 9965589-035.D00G 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C15-8GTZ 8GB

G Skill Intl F4-3200C15-8GTZ 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMW64GX4M4A2666C16 16GB

Corsair CMW64GX4M4A2666C16 16GB