Samsung M471B5173DB0-YK0 4GB vs Samsung M471B5273DH0-YK0 4GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Samsung M471B5273DH0-YK0 4GB

Samsung M471B5273DH0-YK0 4GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

Samsung M471B5273DH0-YK0 4GB

需要考虑的原因
Samsung M471B5273DH0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 45

左右 -10% 更低的延时
更快的读取速度，GB/s

12.9 12

测试中的平均数值
更快的写入速度，GB/s

9.0 7.8

测试中的平均数值

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5273DH0-YK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

45 41
读取速度，GB/s

12.0 12.9
写入速度，GB/s

7.8 9.0
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1939 1958

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology F641GU67F9333G 8GB

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Golden Empire CL16-16-16 D4-3200 4GB

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Kingston HX432C15PB3/16G 16GB

Kingston HX432C15PB3/16G 16GB

Kingston ACR16D3LS1NGG/2G 2GB

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Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

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Samsung M471B5173QH0-YK0 4GB

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Kingston KF2933C17S4/32G 32GB

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Samsung M393B1G70BH0-YK0 8GB

Corsair CM4X8GF2400C16K4 8GB

Corsair CM4X8GF2400C16K4 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Apacer Technology GD2.1527CS.001 8GB

Apacer Technology GD2.1527CS.001 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

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AMD AE34G1601U1 4GB

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Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

SK Hynix HMA41GR7AFR8N-UH 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB