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Samsung M471B5173DB0-YK0 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
比较
Samsung M471B5173DB0-YK0 4GB vs Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
总分
Samsung M471B5173DB0-YK0 4GB
总分
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
45
左右 -67% 更低的延时
更快的读取速度,GB/s
20.6
12
测试中的平均数值
更快的写入速度,GB/s
18.4
7.8
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
27
读取速度,GB/s
12.0
20.6
写入速度,GB/s
7.8
18.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1939
3826
Samsung M471B5173DB0-YK0 4GB RAM的比较
Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT512T64U88B0BY-3C 512MB
Kllisre M378A5143EB2-CRC 4GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
Samsung M393B1K70CH0-CH9 8GB
Avant Technology W642GU42J2320NH 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMWX8GD3600C18W4 8GB
Kingston K531R8-MIN 4GB
Kingston HP26D4S9S8MD-8 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Mushkin MR[A/B]4U266GHHF8G 8GB
Kingston 99P5474-014.A00LF 4GB
Corsair CMW16GX4M2K4000C19 8GB
Kingston 99U5474-022.A00LF 2GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 99U5723-002.A00G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3333C16-16GTZR 16GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMT64GX4M4C3466C16 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
报告一个错误
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Bug description
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