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Samsung M471B5173DB0-YK0 4GB
V-Color Technology Inc. TA48G30S815G 8GB

Samsung M471B5173DB0-YK0 4GB vs V-Color Technology Inc. TA48G30S815G 8GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
V-Color Technology Inc. TA48G30S815G 8GB

V-Color Technology Inc. TA48G30S815G 8GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
V-Color Technology Inc. TA48G30S815G 8GB 需要考虑的原因
V-Color Technology Inc. TA48G30S815G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 45
    左右 -150% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
V-Color Technology Inc. TA48G30S815G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 18
  • 读取速度，GB/s
    12.0 left arrow 17.2
  • 写入速度，GB/s
    7.8 left arrow 8.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 2422

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

V-Color Technology Inc. TA48G30S815G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
V-Color Technology Inc. TA48G30S815G 8GB
V-Color Technology Inc. TA48G30S815G 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMK64GX4M8B3200C16 8GB
Corsair CMK64GX4M8B3200C16 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
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Samsung M378T5663QZ3-CF7 2GB
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Ramaxel Technology RMSA3260MD78HAF-2666 8GB
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A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
内存RAM
Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
Kingston KHX2933C17S4/16G 16GB
Kingston KHX2933C17S4/16G 16GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix HMA82GS6DJR8N-XN 16GB
SK Hynix HMA82GS6DJR8N-XN 16GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Corsair CM4X4GF2400C14K4 4GB
Corsair CM4X4GF2400C14K4 4GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
内存RAM
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3000C16-16GTZR 16GB
G Skill Intl F4-3000C16-16GTZR 16GB
内存RAM