Samsung M471B5173QH0-YK0 4GB vs A-DATA Technology AD4U240038G17-BHYA 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

A-DATA Technology AD4U240038G17-BHYA 8GB

A-DATA Technology AD4U240038G17-BHYA 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

A-DATA Technology AD4U240038G17-BHYA 8GB

需要考虑的原因
A-DATA Technology AD4U240038G17-BHYA 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 45

左右 -96% 更低的延时
更快的读取速度，GB/s

14.4 12.3

测试中的平均数值
更快的写入速度，GB/s

9.0 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

A-DATA Technology AD4U240038G17-BHYA 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 23
读取速度，GB/s

12.3 14.4
写入速度，GB/s

8.0 9.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1992 2408

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R5S38G1601U2S 8GB

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Golden Empire CL18-22-22 D4-3600 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Transcend Information AQD-SD4U4GN21-SG 4GB

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Samsung M4 70T5663CZ3-CE6 2GB

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AMD AE34G1601U1 4GB

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Crucial Technology CT4G4DFS8213.C8FAD11 4GB

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Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

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G Skill Intl F4-2666C18-8GFT 8GB

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Kingston 9905458-017.A01LF 4GB

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Heoriady M471A1K43CB1-CTD 8GB

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Samsung M393B1K70QB0-CK0 8GB

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Kingston ACR32D4S2S1ME-8 8GB

Kingston ACR32D4S2S1ME-8 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair MK16GX44A2666C16 4GB

Corsair MK16GX44A2666C16 4GB