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Samsung M471B5173QH0-YK0 4GB
Avant Technology W6451U66J9266ND 4GB

Samsung M471B5173QH0-YK0 4GB vs Avant Technology W6451U66J9266ND 4GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Avant Technology W6451U66J9266ND 4GB

Avant Technology W6451U66J9266ND 4GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 72
    左右 38% 更低的延时
Avant Technology W6451U66J9266ND 4GB 需要考虑的原因
Avant Technology W6451U66J9266ND 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Avant Technology W6451U66J9266ND 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 72
  • 读取速度，GB/s
    12.3 left arrow 16.6
  • 写入速度，GB/s
    8.0 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 1731

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Avant Technology W6451U66J9266ND 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Avant Technology W6451U66J9266ND 4GB
Avant Technology W6451U66J9266ND 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMA82GS6AFR8N-UH 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston 9965604-027.D00G 8GB
Kingston 9965604-027.D00G 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston 9965600-005.A01G 16GB
Kingston 9965600-005.A01G 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Kingston KHX2933C17S4/32G 32GB
Kingston KHX2933C17S4/32G 32GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston ACR32D4U2S8ME-16 16GB
Kingston ACR32D4U2S8ME-16 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3000C15-4GVRB 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 9905702-006.A00G 8GB
Kingston 9905702-006.A00G 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
EVGA 8GX-D4-2800-MR 8GB
EVGA 8GX-D4-2800-MR 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Kingston 99U5704-001.A00G 4GB
Kingston 99U5704-001.A00G 4GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
SK Hynix HMA42GR7MFR4N-TF 16GB
SK Hynix HMA42GR7MFR4N-TF 16GB
内存RAM