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Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
比较
Samsung M471B5173QH0-YK0 4GB vs Chun Well Technology Holding Limited D4U1636181DC 16GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Chun Well Technology Holding Limited D4U1636181DC 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited D4U1636181DC 16GB
报告一个错误
低于PassMark测试中的延时,ns
36
45
左右 -25% 更低的延时
更快的读取速度,GB/s
17.3
12.3
测试中的平均数值
更快的写入速度,GB/s
12.2
8.0
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
36
读取速度,GB/s
12.3
17.3
写入速度,GB/s
8.0
12.2
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1992
3169
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Chun Well Technology Holding Limited D4U1636181DC 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16JTF51264HZ-1G6M1 4GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
A-DATA Technology DQVE1908 512MB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
SK Hynix HYMP112S64CP6-S6 1GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
Corsair CM2X1024-8500C5D 1GB
Kingston 9905702-204.A00G 8GB
Samsung M378B5773DH0-CH9 2GB
Samsung M393A5143DB0-CRC 4GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M378A2G43AB3-CWE 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Elpida EBE10UE8AFSA-8G-F 1GB
G Skill Intl F4-3866C18-8GTZKW 8GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
报告一个错误
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Bug description
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