Samsung M471B5173QH0-YK0 4GB vs Crucial Technology BLS8G4D240FSEK.8FBD 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSEK.8FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 45

左右 -45% 更低的延时
更快的读取速度，GB/s

15.1 12.3

测试中的平均数值
更快的写入速度，GB/s

9.8 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 31
读取速度，GB/s

12.3 15.1
写入速度，GB/s

8.0 9.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1992 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Apacer Technology 78.CAGPW.40C0B 8GB

Apacer Technology 78.CAGPW.40C0B 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD64GX4M8A2666C15 8GB

Corsair CMD64GX4M8A2666C15 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB

Apacer Technology GD2.1140CH.001 4GB

Apacer Technology GD2.1140CH.001 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMK16GX4M2K4133C19 8GB

Corsair CMK16GX4M2K4133C19 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CMR32GX4M4C3600C18 8GB

Corsair CMR32GX4M4C3600C18 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMK16GX4M1D3000C16 16GB

Corsair CMK16GX4M1D3000C16 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-4000C18-32GTZR 32GB

G Skill Intl F4-4000C18-32GTZR 32GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-2400C15-4GVR 4GB

G Skill Intl F4-2400C15-4GVR 4GB