Samsung M471B5173QH0-YK0 4GB vs Crucial Technology CT16G4DFD8266.M16FE 16GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Crucial Technology CT16G4DFD8266.M16FE 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 45

左右 -36% 更低的延时
更快的读取速度，GB/s

16.5 12.3

测试中的平均数值
更快的写入速度，GB/s

13.6 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 33
读取速度，GB/s

12.3 16.5
写入速度，GB/s

8.0 13.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1992 3367

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CMH16GX4M2E3200C16 8GB

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Samsung M471B5173DB0-YK0 4GB

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SK Hynix HMA41GR7MFR8N-TF 8GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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SK Hynix HMA84GL7AMR4N-TF 32GB

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Samsung M393A1K43BB1-CTD 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Kingston 9905744-062.A00G 32GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

G Skill Intl F4-4400C19-32GVK 32GB

G Skill Intl F4-4400C19-32GVK 32GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393A4K40BB2-CTD 32GB

Samsung M393A4K40BB2-CTD 32GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905701-003.A00G 16GB

Kingston 9905701-003.A00G 16GB