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Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB

Samsung M471B5173QH0-YK0 4GB vs Crucial Technology CT4G4DFS8213.C8FAR 4GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FAR 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Crucial Technology CT4G4DFS8213.C8FAR 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 45
    左右 -61% 更低的延时
  • 更快的读取速度，GB/s
    12.6 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 28
  • 读取速度，GB/s
    12.3 left arrow 12.6
  • 写入速度，GB/s
    8.0 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 2490

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMH16GX4M2E3200C16 8GB
Corsair CMH16GX4M2E3200C16 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 9905701-003.A00G 16GB
Kingston 9905701-003.A00G 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Samsung M391A2K43BB1-CRC 16GB
Samsung M391A2K43BB1-CRC 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Kingston 9905700-026.A00G 8GB
Kingston 9905700-026.A00G 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905665-009.A00G 4GB
Kingston 9905665-009.A00G 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CM4X16GC3200C16K4 16GB
Corsair CM4X16GC3200C16K4 16GB
内存RAM
PNY Electronics 4GBH2X02E99927-16 4GB
PNY Electronics 4GBH2X02E99927-16 4GB
Corsair CMW64GX4M8A2666C16 8GB
Corsair CMW64GX4M8A2666C16 8GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
Corsair CM4B8G4J2400A16K2-ON 8GB
Corsair CM4B8G4J2400A16K2-ON 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KF2666C16D4/16G 16GB
Kingston KF2666C16D4/16G 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
内存RAM