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Samsung M471B5173QH0-YK0 4GB
Essencore Limited KD48GU880-36A180Z 8GB

Samsung M471B5173QH0-YK0 4GB vs Essencore Limited KD48GU880-36A180Z 8GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Essencore Limited KD48GU880-36A180Z 8GB

Essencore Limited KD48GU880-36A180Z 8GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Essencore Limited KD48GU880-36A180Z 8GB 需要考虑的原因
Essencore Limited KD48GU880-36A180Z 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 45
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    22.6 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Essencore Limited KD48GU880-36A180Z 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 34
  • 读取速度，GB/s
    12.3 left arrow 22.6
  • 写入速度，GB/s
    8.0 left arrow 16.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 3597

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Essencore Limited KD48GU880-36A180Z 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Essencore Limited KD48GU880-36A180Z 8GB
Essencore Limited KD48GU880-36A180Z 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Mushkin MES4S213FF16G28 16GB
Mushkin MES4S213FF16G28 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation W4U2400PS-8G 8GB
Panram International Corporation W4U2400PS-8G 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston ACR24D4U7S8MB-8 8GB
Kingston ACR24D4U7S8MB-8 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology 78.B1GN3.AZ32B 4GB
Apacer Technology 78.B1GN3.AZ32B 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW16GX4M2Z4600C18 8GB
Corsair CMW16GX4M2Z4600C18 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Panram International Corporation PUD43000C168G2NJR 8GB
Panram International Corporation PUD43000C168G2NJR 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-3200C16-4GRKD 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CM4X8GF2666C16K8 8GB
Corsair CM4X8GF2666C16K8 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905711-032.A00G 8GB
Kingston 9905711-032.A00G 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Avant Technology J641GU42J5213N0 8GB
Avant Technology J641GU42J5213N0 8GB
内存RAM