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Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2400C17-4GNT 4GB

Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-2400C17-4GNT 4GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
G Skill Intl F4-2400C17-4GNT 4GB

G Skill Intl F4-2400C17-4GNT 4GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
G Skill Intl F4-2400C17-4GNT 4GB 需要考虑的原因
G Skill Intl F4-2400C17-4GNT 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 45
    左右 -96% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2400C17-4GNT 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 23
  • 读取速度，GB/s
    12.3 left arrow 18.1
  • 写入速度，GB/s
    8.0 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 3125

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

G Skill Intl F4-2400C17-4GNT 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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PNY Electronics PNY 2GB
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Elpida EBJ17RG4EFWA-DJ-F 16GB
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内存RAM
Samsung M378B5773CH0-CH9 2GB
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Samsung DDR3 8GB 1600MHz 8GB
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G Skill Intl F4-2400C15-8GVS 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
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Apacer Technology 78.CAGP7.40C0B 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Samsung M391A1K43BB2-CTD 8GB
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Ramaxel Technology RMR5030ME68F9F1600 4GB
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Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
Samsung M471A4G43BB1-CWE 32GB
Samsung M471A4G43BB1-CWE 32GB
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SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
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G Skill Intl F4-2666C18-4GFX 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
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