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Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2666C19-8GIS 8GB

Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-2666C19-8GIS 8GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
G Skill Intl F4-2666C19-8GIS 8GB

G Skill Intl F4-2666C19-8GIS 8GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
G Skill Intl F4-2666C19-8GIS 8GB 需要考虑的原因
G Skill Intl F4-2666C19-8GIS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 45
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2666C19-8GIS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 30
  • 读取速度，GB/s
    12.3 left arrow 16.5
  • 写入速度，GB/s
    8.0 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 3158

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

G Skill Intl F4-2666C19-8GIS 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology BL8G32C16U4W.8FE 8GB
Crucial Technology BL8G32C16U4W.8FE 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Apacer Technology GD2.1827CS.003 8GB
Apacer Technology GD2.1827CS.003 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Apacer Technology GD2.1831WS.002 16GB
Apacer Technology GD2.1831WS.002 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston KWTHG4-MIE 16GB
Kingston KWTHG4-MIE 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Kingston KHX2666C13/8GX 8GB
Kingston KHX2666C13/8GX 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CM4X4GF2133C15S2 4GB
Corsair CM4X4GF2133C15S2 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
内存RAM
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Mushkin 99[2/7/4]191F 4GB
Mushkin 99[2/7/4]191F 4GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-3600C16-16GTZRC 16GB
G Skill Intl F4-3600C16-16GTZRC 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
内存RAM
Samsung M393B1K70CHD-CH9 8GB
Samsung M393B1K70CHD-CH9 8GB
G Skill Intl F4-2666C19-16GRS 16GB
G Skill Intl F4-2666C19-16GRS 16GB
内存RAM