Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-4000C16-8GVK 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

G Skill Intl F4-4000C16-8GVK 8GB

G Skill Intl F4-4000C16-8GVK 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

G Skill Intl F4-4000C16-8GVK 8GB

需要考虑的原因
G Skill Intl F4-4000C16-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 45

左右 -88% 更低的延时
更快的读取速度，GB/s

19.5 12.3

测试中的平均数值
更快的写入速度，GB/s

18.2 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-4000C16-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 24
读取速度，GB/s

12.3 19.5
写入速度，GB/s

8.0 18.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 3990

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Crucial Technology CT16G4SFD824A.M16FA 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston MSI24D4U7D8MH-16 16GB

Kingston MSI24D4U7D8MH-16 16GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Teikon TMA81GS6AFR8N-UHSC 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

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Swissbit MEU25664D6BC2EP-30 2GB

Corsair CMW64GX4M4D3600C18 16GB

Corsair CMW64GX4M4D3600C18 16GB