Samsung M471B5173QH0-YK0 4GB vs Hyundai Inc AR32C16S8K2HU416R 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Hyundai Inc AR32C16S8K2HU416R 8GB

需要考虑的原因
Hyundai Inc AR32C16S8K2HU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 45

左右 -125% 更低的延时
更快的读取速度，GB/s

19 12.3

测试中的平均数值
更快的写入速度，GB/s

15.1 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Hyundai Inc AR32C16S8K2HU416R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 20
读取速度，GB/s

12.3 19.0
写入速度，GB/s

8.0 15.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1992 3410

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5173QH0-YK0 4GB

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Kingston KP4T2F-PSB 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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SK Hynix HYMP112U64CP8-S6 1GB

Corsair CMK16GX4M2Z3200C16 8GB

Corsair CMK16GX4M2Z3200C16 8GB

Samsung M471B5173QH0-YK0 4GB

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Kingston HX424C15PB/4 4GB

Kingston HX424C15PB/4 4GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Kingston 99U5474-023.A00LF 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB