Samsung M471B5173QH0-YK0 4GB vs Kingston 9905598-028.A00G 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Kingston 9905598-028.A00G 8GB

Kingston 9905598-028.A00G 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

更快的写入速度，GB/s

8.0 6.7

测试中的平均数值

Kingston 9905598-028.A00G 8GB

需要考虑的原因
Kingston 9905598-028.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 45

左右 -80% 更低的延时
更快的读取速度，GB/s

13.1 12.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Kingston 9905598-028.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 25
读取速度，GB/s

12.3 13.1
写入速度，GB/s

8.0 6.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 2038

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMWX8GD3200C16W2E 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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AMD AE34G2139U2 4GB

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G Skill Intl F4-3600C19-16GSXF 16GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Golden Empire CL16-18-18 D4-3400 4GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Kingston 9905403-011.A03LF 2GB

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Micron Technology 16ATF2G64HZ-2G6H1 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston KF2666C13D4/8GX 8GB

Kingston KF2666C13D4/8GX 8GB

Kingston KF3200C16D4/16GX 16GB

Kingston KF3200C16D4/16GX 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB