Samsung M471B5173QH0-YK0 4GB vs Kingston 9905700-053.A00G 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Kingston 9905700-053.A00G 8GB

Kingston 9905700-053.A00G 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Kingston 9905700-053.A00G 8GB

需要考虑的原因
Kingston 9905700-053.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 45

左右 -10% 更低的延时
更快的读取速度，GB/s

13.8 12.3

测试中的平均数值
更快的写入速度，GB/s

10.0 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Kingston 9905700-053.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 41
读取速度，GB/s

12.3 13.8
写入速度，GB/s

8.0 10.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1992 2458

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited KD48GU481-26N1600 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905713-004.A00G 4GB

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Kingston KVR533D2N4 512MB

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Kingston HP32D4U8S8HD-8X 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Corsair CMD8GX4M2B4000C19 4GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston 9905678-139.A00G 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

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Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

Corsair CMX8GX3M2A2000C9 4GB

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G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-2400C15-8GIS 8GB

G Skill Intl F4-2400C15-8GIS 8GB