Samsung M471B5173QH0-YK0 4GB vs Kingston 9905701-141.A00G 16GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Kingston 9905701-141.A00G 16GB

Kingston 9905701-141.A00G 16GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Kingston 9905701-141.A00G 16GB

需要考虑的原因
Kingston 9905701-141.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

21 45

左右 -114% 更低的延时
更快的读取速度，GB/s

19.6 12.3

测试中的平均数值
更快的写入速度，GB/s

16.5 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Kingston 9905701-141.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 21
读取速度，GB/s

12.3 19.6
写入速度，GB/s

8.0 16.5
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1992 3723

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT8G4SFS832A.M8FRS 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3200C16-8GTZRN 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

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Corsair CMW32GX4M2C3000C15 16GB