Samsung M471B5173QH0-YK0 4GB vs Mushkin 99[2/7/4]205F 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Mushkin 99[2/7/4]205F 8GB

需要考虑的原因
Mushkin 99[2/7/4]205F 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 45

左右 -73% 更低的延时
更快的读取速度，GB/s

13.5 12.3

测试中的平均数值
更快的写入速度，GB/s

11.3 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Mushkin 99[2/7/4]205F 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 26
读取速度，GB/s

12.3 13.5
写入速度，GB/s

8.0 11.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 2891

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD8266.M16FJ 16GB

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A-DATA Technology VDQVE1B16 2GB

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InnoDisk Corporation M4S0-8GS1NCIK 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Golden Empire CL15-17-17 D4-2666 8GB

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Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Avant Technology W641GU67J7240N8 8GB

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A-DATA Technology DDR4 2666 8GB

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SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

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G Skill Intl F4-3733C17-8GTZKW 8GB

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Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB