Samsung M471B5173QH0-YK0 4GB vs Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 45

左右 -67% 更低的延时
更快的读取速度，GB/s

17.2 12.3

测试中的平均数值
更快的写入速度，GB/s

13.6 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 27
读取速度，GB/s

12.3 17.2
写入速度，GB/s

8.0 13.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 3292

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M4 70T2953EZ3-CE6 1GB

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Apacer Technology 76.B305G.D500B 4GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Crucial Technology 8G4US2400.M8B1 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-3200C16-4GRB 4GB

G Skill Intl F4-3200C16-4GRB 4GB