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Samsung M471B5773DH0-CK0 2GB
Kingston KMKYF9-HYA 8GB

Samsung M471B5773DH0-CK0 2GB vs Kingston KMKYF9-HYA 8GB

总分
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分
star star star star star
Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

差异 规格 评论

差异

Samsung M471B5773DH0-CK0 2GB 需要考虑的原因
Samsung M471B5773DH0-CK0 2GB
报告一个错误
Kingston KMKYF9-HYA 8GB 需要考虑的原因
Kingston KMKYF9-HYA 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 27
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5773DH0-CK0 2GB
Kingston KMKYF9-HYA 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 23
  • 读取速度，GB/s
    12.2 left arrow 16.9
  • 写入速度，GB/s
    7.8 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1763 left arrow 2899

Samsung M471B5773DH0-CK0 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Kingston KMKYF9-HYA 8GB RAM的比较

Kingston 9905403-156.A00LF 2GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Kingston KMKYF9-HYA 8GB
Kingston KMKYF9-HYA 8GB
内存RAM
Samsung M391B5273DH0-YK0 4GB
Samsung M391B5273DH0-YK0 4GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston 9905624-044.A00G 8GB
Kingston 9905624-044.A00G 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMR16GX4M2D3000C16 8GB
Corsair CMR16GX4M2D3000C16 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology BLS8G4D240FSB.16FBD? 8GB
Crucial Technology BLS8G4D240FSB.16FBD? 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Gloway International (HK) STKD4GAM2400-F 8GB
Gloway International (HK) STKD4GAM2400-F 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX2400C12D4/16GX 16GB
Kingston KHX2400C12D4/16GX 16GB
内存RAM
Samsung M2S4G64CB8HD5N-CG 4GB
Samsung M2S4G64CB8HD5N-CG 4GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA81GU6CJR8N-UH 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
内存RAM