RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471B5773DH0-CK0 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Samsung M471B5773DH0-CK0 2GB vs Patriot Memory (PDP Systems) 3200 C16 Series 8GB

总分
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

差异 规格 评论

差异

Samsung M471B5773DH0-CK0 2GB 需要考虑的原因
Samsung M471B5773DH0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 10% 更低的延时
Patriot Memory (PDP Systems) 3200 C16 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5773DH0-CK0 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 30
  • 读取速度，GB/s
    12.2 left arrow 18.0
  • 写入速度，GB/s
    7.8 left arrow 14.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1763 left arrow 3466

Samsung M471B5773DH0-CK0 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB RAM的比较

Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3200C14-32GTRG 32GB
G Skill Intl F4-3200C14-32GTRG 32GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3600C18-16GTZN 16GB
G Skill Intl F4-3600C18-16GTZN 16GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3600C14-16GTZRA 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C15-4GIS 4GB
G Skill Intl F4-2400C15-4GIS 4GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Corsair CMR128GX4M8Z2933C16 16GB
Corsair CMR128GX4M8Z2933C16 16GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Kingston 9965662-018.A00G 32GB
Kingston 9965662-018.A00G 32GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BL32G32C16S4B.16FB 32GB
Crucial Technology BL32G32C16S4B.16FB 32GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Kingston 9965604-027.D00G 8GB
Kingston 9965604-027.D00G 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CM4X8GE2400C15K4 8GB
Corsair CM4X8GE2400C15K4 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingston KYXC0V-MIH 16GB
Kingston KYXC0V-MIH 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
内存RAM