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Samsung M471B5773DH0-CK0 2GB
SK Hynix HMT325S6BFR8C-H9 2GB

Samsung M471B5773DH0-CK0 2GB vs SK Hynix HMT325S6BFR8C-H9 2GB

总分
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分
star star star star star
SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

差异 规格 评论

差异

Samsung M471B5773DH0-CK0 2GB 需要考虑的原因
Samsung M471B5773DH0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 41
    左右 34% 更低的延时
  • 更快的读取速度，GB/s
    12.2 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
SK Hynix HMT325S6BFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB
报告一个错误

规格

完整的技术规格清单
Samsung M471B5773DH0-CK0 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 41
  • 读取速度，GB/s
    12.2 left arrow 11.6
  • 写入速度，GB/s
    7.8 left arrow 7.3
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1763 left arrow 1438

Samsung M471B5773DH0-CK0 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

SK Hynix HMT325S6BFR8C-H9 2GB RAM的比较

Elpida EBJ21UE8BDS0-DJ-F 2GB
Kingston 99U5469-041.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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