SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

总分

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

差异规格评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 46

左右 -156% 更低的延时
更快的读取速度，GB/s

20.8 14.2

测试中的平均数值
更快的写入速度，GB/s

15.1 13.6

测试中的平均数值

规格

完整的技术规格清单

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 18
读取速度，GB/s

14.2 20.8
写入速度，GB/s

13.6 15.1
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2717 3402

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix DDR2 800 2G 2GB

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Kingston 99U5471-030.A00LF 8GB

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Crucial Technology CT8G4DFS8266.C8FJ 8GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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G Skill Intl F4-4000C18-16GTZN 16GB