SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Corsair CMSX32GX4M2A3000C16 16GB

总分

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分

Corsair CMSX32GX4M2A3000C16 16GB

Corsair CMSX32GX4M2A3000C16 16GB

差异规格评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

报告一个错误

Corsair CMSX32GX4M2A3000C16 16GB

需要考虑的原因
Corsair CMSX32GX4M2A3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更快的读取速度，GB/s

17.3 14.2

测试中的平均数值
更快的写入速度，GB/s

13.9 13.6

测试中的平均数值

规格

完整的技术规格清单

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Corsair CMSX32GX4M2A3000C16 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

14.2 17.3
写入速度，GB/s

13.6 13.9
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2717 3359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 75.A73AA.G03 2GB

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Smart Modular SF464128CKHIWDFSEG 4GB

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A-DATA Technology AO1P24HC8T1-BQXS 8GB

A-DATA Technology AO1P24HC8T1-BQXS 8GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CM4X16GE2666C18S4 16GB

Corsair CM4X16GE2666C18S4 16GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Corsair CMSX4GX3M1A1600C9 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

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Samsung M471B5273EB0-CK0 4GB

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ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB