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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-2666C19-8GRS 8GB
比较
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs G Skill Intl F4-2666C19-8GRS 8GB
总分
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
总分
G Skill Intl F4-2666C19-8GRS 8GB
差异
规格
评论
差异
需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
报告一个错误
更快的写入速度,GB/s
13.6
12.6
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2666C19-8GRS 8GB
报告一个错误
低于PassMark测试中的延时,ns
35
46
左右 -31% 更低的延时
更快的读取速度,GB/s
16.3
14.2
测试中的平均数值
规格
完整的技术规格清单
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-2666C19-8GRS 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
46
35
读取速度,GB/s
14.2
16.3
写入速度,GB/s
13.6
12.6
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2717
2863
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C19-8GRS 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMX4GX3M2A1600C9 2GB
AMD R744G2400U1S-UO 4GB
A-DATA Technology AD73I1C1674EV 4GB
Golden Empire CL16-16-16 D4-3000 4GB
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3466C16-16GTZSW 16GB
AMD R538G1601U2S-UO 8GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BL8G30C15U4W.8FE 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-2133C15-16GFX 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-3600C16-16GVKC 16GB
A-DATA Technology DDR2 800G 2GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
Kingston KVR800D2N6/2G 2GB
Samsung M471A5143DB0-CPB 4GB
Team Group Inc. Vulcan-1600 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-4000C18-32GTRS 32GB
SK Hynix HMT325S6BFR8C-H9 2GB
Terabyte Co Ltd RCX2-16G3000R 8GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA82GU6CJR8N-VK 16GB
报告一个错误
×
Bug description
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