SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Kingston KHX2400C15S4/8G 8GB

总分

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分

Kingston KHX2400C15S4/8G 8GB

Kingston KHX2400C15S4/8G 8GB

差异规格评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

报告一个错误

更快的写入速度，GB/s

13.6 12.7

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Kingston KHX2400C15S4/8G 8GB

需要考虑的原因
Kingston KHX2400C15S4/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 46

左右 -44% 更低的延时
更快的读取速度，GB/s

15.7 14.2

测试中的平均数值

规格

完整的技术规格清单

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Kingston KHX2400C15S4/8G 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 32
读取速度，GB/s

14.2 15.7
写入速度，GB/s

13.6 12.7
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2717 2824

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Kingston KVR800D2N6/2G 2GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Samsung M393B1G70QH0-YK0 8GB

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Essencore Limited KD4AGU880-36A180X 16GB

Essencore Limited KD4AGU880-36A180X 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston ACR32D4S2S1ME-8 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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G Skill Intl F4-3400C16-8GTZSW 8GB