SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Mushkin MRA4S293MMMF32G 32GB

总分

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分

Mushkin MRA4S293MMMF32G 32GB

Mushkin MRA4S293MMMF32G 32GB

差异规格评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

报告一个错误

Mushkin MRA4S293MMMF32G 32GB

需要考虑的原因
Mushkin MRA4S293MMMF32G 32GB

报告一个错误

低于PassMark测试中的延时，ns

32 46

左右 -44% 更低的延时
更快的读取速度，GB/s

15.7 14.2

测试中的平均数值
更快的写入速度，GB/s

14.9 13.6

测试中的平均数值
更高的内存带宽，mbps

23400 21300

左右 1.1 更高的带宽

规格

完整的技术规格清单

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Mushkin MRA4S293MMMF32G 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 32
读取速度，GB/s

14.2 15.7
写入速度，GB/s

13.6 14.9
内存带宽，mbps

21300 23400

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2717 3368

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5673FH0-CF8 2GB

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