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SK Hynix HMA41GR7AFR8N-UH 8GB
Samsung M393A1G43DB1-CRC 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB vs Samsung M393A1G43DB1-CRC 8GB

总分
star star star star star
SK Hynix HMA41GR7AFR8N-UH 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB

总分
star star star star star
Samsung M393A1G43DB1-CRC 8GB

Samsung M393A1G43DB1-CRC 8GB

差异 规格 评论

差异

SK Hynix HMA41GR7AFR8N-UH 8GB 需要考虑的原因
SK Hynix HMA41GR7AFR8N-UH 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.1 left arrow 10.8
    测试中的平均数值
Samsung M393A1G43DB1-CRC 8GB 需要考虑的原因
Samsung M393A1G43DB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 46
    左右 -44% 更低的延时
  • 更快的写入速度，GB/s
    8.5 left arrow 8.1
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA41GR7AFR8N-UH 8GB
Samsung M393A1G43DB1-CRC 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 32
  • 读取速度，GB/s
    11.1 left arrow 10.8
  • 写入速度，GB/s
    8.1 left arrow 8.5
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2388 left arrow 2349

SK Hynix HMA41GR7AFR8N-UH 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M393A1G43DB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9905316-106.A02LF 1GB
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Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
内存RAM
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-2400C15-8GNS 8GB
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