SK Hynix HMA451U6AFR8N-TF 4GB vs Avant Technology W642GU42J5213N8 16GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

Avant Technology W642GU42J5213N8 16GB

Avant Technology W642GU42J5213N8 16GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 38

左右 3% 更低的延时
更快的读取速度，GB/s

14.7 12.9

测试中的平均数值
更快的写入速度，GB/s

10.6 9.9

测试中的平均数值

Avant Technology W642GU42J5213N8 16GB

需要考虑的原因
Avant Technology W642GU42J5213N8 16GB

报告一个错误

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

Avant Technology W642GU42J5213N8 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 38
读取速度，GB/s

14.7 12.9
写入速度，GB/s

10.6 9.9
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2438 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQKD1A08 1GB

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Crucial Technology BLS8G4D26BFSBK.8FD 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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A-DATA Technology AO1P26KC8T1-BPXS 8GB

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Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston MSI24D4S7D8MB-16 16GB

Kingston MSI24D4S7D8MB-16 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

EVGA 8GX-D4-3000-MR 8GB

EVGA 8GX-D4-3000-MR 8GB

Kingston 9965433-034.A00LF 4GB

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Corsair CMR16GX4M2A2666C16 8GB

Corsair CMR16GX4M2A2666C16 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-3200C22-8GRS 8GB

G Skill Intl F4-3200C22-8GRS 8GB