SK Hynix HMA451U6AFR8N-TF 4GB vs Corsair CMRX8GD3000C16R4D 8GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

Corsair CMRX8GD3000C16R4D 8GB

Corsair CMRX8GD3000C16R4D 8GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

Corsair CMRX8GD3000C16R4D 8GB

需要考虑的原因
Corsair CMRX8GD3000C16R4D 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 37

左右 -76% 更低的延时
更快的读取速度，GB/s

18.3 14.7

测试中的平均数值
更快的写入速度，GB/s

14.0 10.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

Corsair CMRX8GD3000C16R4D 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 21
读取速度，GB/s

14.7 18.3
写入速度，GB/s

10.6 14.0
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2438 3148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F3-1333C9-4GIS 4GB

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Micron Technology 8ATF51264HZ-2G1A2 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

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PNY Electronics PNY 2GB

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Golden Empire CL15-17-17 D4-3200 8GB

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Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Corsair CMW64GX4M8C3200C16 8GB

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SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

Apacer Technology 78.BAGN8.AZC0B 4GB

Apacer Technology 78.BAGN8.AZC0B 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Corsair CMK16GX4M2D3600C16 8GB

Corsair CMK16GX4M2D3600C16 8GB